Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes

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• 作者：Woon Ik Park ; Jong Moon Yoon ; Moonkyu Park ; Jinsup Lee ; Sung Kyu Kim ; Jae Won Jeong ; Kyungho Kim ; Hu Young Jeong ; Seokwoo Jeon ; Kwang Soo No ; Jeong Yong Lee ; Yeon Sik Jung
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：March 14, 2012
• 年：2012
• 卷：12
• 期：3
• 页码：1235-1240
• 全文大小：432K
• 年卷期：v.12,no.3(March 14, 2012)
• ISSN：1530-6992

文摘

We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.

Keywords:

Block copolymer; self-assembly; resistive memory; nanodot; Pt; graphene