Surface-Dominated Conduction in a 6 nm thick Bi2Se3 Thin Film

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• 作者：Liang He ; Faxian Xiu ; Xinxin Yu ; Marcus Teague ; Wanjun ; Jiang ; Yabin Fan ; Xufeng Kou ; Murong Lang ; Yong Wang ; Guan Huang ; Nai-Chang Yeh ; Kang L. Wang
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：March 14, 2012
• 年：2012
• 卷：12
• 期：3
• 页码：1486-1490
• 全文大小：404K
• 年卷期：v.12,no.3(March 14, 2012)
• ISSN：1530-6992

文摘

We report a direct observation of surface dominated conduction in an intrinsic Bi₂Se₃ thin film with a thickness of six quintuple layers grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy. Shubnikov-de Haas oscillations from the topological surface states suggest that the Fermi level falls inside the bulk band gap and is 53 卤 5 meV above the Dirac point, which is in agreement with 70 卤 20 meV obtained from scanning tunneling spectroscopies. Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states, when the film thickness is pushed to nanometer range.

Keywords:

Intrinsic topological insulator; Bi₂Se₃; transport properties; surface states; quantum oscillations