A Facile Route To Recover Intrinsic Graphene over Large Scale

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• 作者：Dong-Wook Shin ; Hyun Myoung Lee ; Seong Man Yu ; Kwang-Soo Lim ; Jae Hoon Jung ; Min-Kyu Kim ; Sang-Woo Kim ; Jae-Hee Han ; Rodney S. Ruoff ; Ji-Beom Yoo
• 刊名：ACS Nano
• 出版年：2012
• 出版时间：September 25, 2012
• 年：2012
• 卷：6
• 期：9
• 页码：7781-7788
• 全文大小：564K
• 年卷期：v.6,no.9(September 25, 2012)
• ISSN：1936-086X

文摘

The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H₂O/O₂ redox system. Semi-ionic C鈥揊 bonding prevents the reaction between the products of the H₂O/O₂ redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H₂O/O₂ redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.

Keywords:

graphene; transistor; intrinsic properties; buffed oxide etch (BOE); PMMA; H₂O/O₂ redox system; Fermi level