Improved Transfer of Graphene for Gated Schottky-Junction, Vertical, Organic, Field-Effect Transistors

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• 作者：Maxime G. Lemaitre ; Evan P. Donoghue ; Mitchell A. McCarthy ; Bo Liu ; Sefaattin Tongay ; Brent Gila ; Purushottam Kumar ; Rajiv K. Singh ; Bill R. Appleton ; Andrew G. Rinzler
• 刊名：ACS Nano
• 出版年：2012
• 出版时间：October 23, 2012
• 年：2012
• 卷：6
• 期：10
• 页码：9095-9102
• 全文大小：504K
• 年卷期：v.6,no.10(October 23, 2012)
• ISSN：1936-086X

文摘

An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10⁶ and 200 mA/cm², respectively, at drain voltages below 5 V.

Keywords:

graphene; transparent electrode; vertical field effect transistor; organic transistors