We demonstrate energy-conversion-efficiency (畏) enhancement of silicon (Si) solar cells by the heterogeneous integration of an In
xGa
1鈥?i>xAs nanowire (NW) array on the rear surface. The NWs are grown
via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped In
xGa
1鈥?i>xAs (
x 鈮?0.7) NW arrays are utilized as not only bac
k-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid In
xGa
1鈥?i>xAs NW-Si solar cell is increased over the entire solar response wavelength range; and 畏 is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.
Keywords:
MOCVD; nanowires; silicon; InxGa1鈭?i>xAs; solar cells