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Heterogeneous Integration of InGaAs Nanowires on the Rear Surface of Si Solar Cells for Efficiency Enhancement
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文摘
We demonstrate energy-conversion-efficiency (畏) enhancement of silicon (Si) solar cells by the heterogeneous integration of an InxGa1鈥?i>xAs nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped InxGa1鈥?i>xAs (x 鈮?0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid InxGa1鈥?i>xAs NW-Si solar cell is increased over the entire solar response wavelength range; and 畏 is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.

Keywords:

MOCVD; nanowires; silicon; InxGa1鈭?i>xAs; solar cells

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