The opto-electronic properties of the Blu-ray phase-change material Ge
8Sb
2Te
11 were investigated and compared to partially substituted compounds. Investigations were performed on Ge
8Sb
2Te
6Se
5 (
I) and SnGe
7Sb
2Te
7Se
4 (
II). To monitor the influence of substitution on both cation and anion sites onto the properties, in Ge
8Sb
2Te
6Se
5, only Te was substituted by Se, while in SnGe
7Sb
2Te
7Se
4, Ge also was partially replaced by Sn, yielding an equivalent degree of substitution. The crystallization of the amorphous compound to a rhombohedral phase was observed. The first transition temperature (
Tc1) is 210 掳C for
I and 185 掳C for
II, while the second transition temperature (
Tc2) cannot be clearly determined, because of the coexistence of both phases. Thin-film properties were examined and an increase of density and roughness was observed for both materials upon crystallization. In situ electrical resistance measurements show a huge electrical contrast between the amorphous samples and the crystalline samples, which amounts to 4 orders of magnitude for
II and 5 orders of magnitude for
I. Optical properties were characterized with variable incident-angle spectroscopic ellipsometry (VASE) and Fourier Transform infrared (FTIR) spectroscopy. Substitution leads to an enormous increase of the reflectivity contrast for blue light: The reflectivity contrast between the different phases increases from 20% to 50% for
I and from 20% to 74% for
II.
Keywords:
phase-change materials; blu-ray; optical contrast; electrical conductivity; structure; thin films