Preferentially Grown Ultranano c-Diamond and n-Diamond Grains on Silicon Nanoneedles from Energetic Species with Enhanced Field-Emission Properties

详细信息    查看全文

• 作者：Joseph P. Thomas ; Huang-Chin Chen ; Shih-Hao Tseng ; Hung-Chi Wu ; Chi-Young Lee ; Hsiu Fung Cheng ; Nyan-Hwa Tai ; I-Nan Lin
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2012
• 出版时间：October 24, 2012
• 年：2012
• 卷：4
• 期：10
• 页码：5103-5108
• 全文大小：386K
• 年卷期：v.4,no.10(October 24, 2012)
• ISSN：1944-8252

文摘

The design and fabrication of well-defined nanostructures have great importance in nanoelectronics. Here we report the precise growth of sub-2 nm (c-diamond) and above 5 nm (n-diamond) size diamond grains from energetic species (chemical vapor deposition process) at low growth temperature of about 460 掳C. We demonstrate that a pre-nucleation induced interface can be accounted for the growth of c-diamond or n-diamond grains on Si-nanoneedles (Si-NN). These preferentially grown allotropic forms of diamond on Si-NN have shown high electron field-emission properties and signify their high potential towards diamond-based electronic applications.

Keywords:

c-diamond; n-diamond; silicon nanoneedles; chemical vapor deposition; electron field emission