Raman Spectroscopy of Boron-Doped Single-Layer Graphene

详细信息    查看全文

• 作者：Yoong Ahm Kim ; Kazunori Fujisawa ; Hiroyuki Muramatsu ; Takuya Hayashi ; Morinobu Endo ; Toshihiko Fujimori ; Katsumi Kaneko ; Mauricio Terrones ; Jan Behrends ; Axel Eckmann ; Cinzia Casiraghi ; Kostya S. Novoselov ; Riichiro Saito ; Mildred S. Dresselhaus
• 刊名：ACS Nano
• 出版年：2012
• 出版时间：July 24, 2012
• 年：2012
• 卷：6
• 期：7
• 页码：6293-6300
• 全文大小：557K
• 年卷期：v.6,no.7(July 24, 2012)
• ISSN：1936-086X

文摘

The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp²-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was 0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon鈥揵oron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

Keywords:

graphene; boron; substitution; Raman