Crystal Growth of the Perovskite Semiconductor CsPbBr3: A New Material for High-Energy Radiation Detection

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• 作者：Constantinos C. Stoumpos ; Christos D. Malliakas ; John A. Peters ; Zhifu Liu ; Maria Sebastian ; Jino Im ; Thomas C. Chasapis ; Arief C. Wibowo ; Duck Young Chung ; Arthur J. Freeman ; Bruce W. Wessels ; Mercouri G. Kanatzidis
• 刊名：Crystal Growth & Design
• 出版年：2013
• 出版时间：July 3, 2013
• 年：2013
• 卷：13
• 期：7
• 页码：2722-2727
• 全文大小：404K
• 年卷期：v.13,no.7(July 3, 2013)
• ISSN：1528-7505

文摘

The synthesis, crystal growth, and structural and optoelectronic characterization has been carried out for the perovskite compound CsPbBr₃. This compound is a direct band gap semiconductor which meets most of the requirements for successful detection of X- and 纬-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials. A structural phase transition which occurs during crystal growth at higher temperature does not seem to affect its crystal quality. Its 渭蟿 product for both hole and electron carriers is approximately equal. The 渭蟿 product for electrons is comparable to cadmium zinc telluride (CZT) and that for holes is 10 times higher than CZT.