Low-Temperature, Directly Depositing Individual Single-Walled Carbon Nanotubes for Fabrication of Suspended Nanotube Devices

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• 作者：Yuanchun Zhao ; Zheng Liu ; Guangtong Liu ; Kaihong Zheng ; Lijun Hu ; Wenjun Ma ; Yan Ren ; Changzhi Gu ; Sishen Xie ; Lianfeng Sun
• 刊名：The Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：August 8, 2013
• 年：2013
• 卷：117
• 期：31
• 页码：16256-16262
• 全文大小：376K
• 年卷期：v.117,no.31(August 8, 2013)
• ISSN：1932-7455

文摘

Single-walled carbon nanotubes (SWNTs) grown by chemical vapor deposition (CVD) are widely used for fabrication of high-performance nanotube devices. However, the high-temperature growth is incompatible with the current complementary metal-oxide semiconductor (CMOS) technology. We demonstrate a low-temperature and direct deposition of the CVD-grown SWNTs. The nanotubes are synthesized by floating catalytic CVD technique and further carried by the flowing gas directly to the low-temperature area. Individual SWNTs have been successfully deposited on Si/SiO₂ substrates covered with a polymethylmethacrylate layer, which results in a suspended geometry of the nanotube in the fabricated devices. We subsequently investigate the electrical-transport properties of a representative small band gap nanotube, which exhibits an ambipolar feature with p-channel mobility up to 1410 cm² V^鈥? S^鈥? at room temperature. Furthermore, low-temperature measurements down to 4 K reveal different transport characteristics with the gate voltage biased near zero or at a large negative value, respectively.