用户名: 密码: 验证码:
Electron Tomography of Au-Catalyzed Semiconductor Nanowires
详细信息    查看全文
文摘
Electron tomography based on Z-contrast scanning transmission electron microscopy (STEM) can be applied to study 3D morphology of nanomaterials at high resolution, that is, 1 nm in all three spatial dimensions, to provide comprehensive insights into the structure of nanomaterials and their interfaces. Here, we report the 3D characterization of Au-catalyzed Ge and Si nanowires using a full-space tilting holder to address the 鈥渕issing wedge鈥?problem in STEM electron tomography. Electron tomography specimens were prepared by a novel two-step sample preparation process to minimize surface damage induced by focused ion beam (FIB) milling. The quality of specimen preparation protocol is demonstrated by the clear visibility of {112} facets in the reconstructed volume, and 3D morphology of Au nanoparticles on the nanowire surface. The 3D distribution of the Au nanoparticles on the coated Ge nanowires is also established. The integrated combination of innovative specimen preparation and full-tilt tomography represents a useful advance in the 3D analysis of nanostructures.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700