In Situ TEM and Energy Dispersion Spectrometer Analysis of Chemical Composition Change in ZnO Nanowire Resistive Memories

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• 作者：Yu-Ting Huang ; Shih-Ying Yu ; Cheng-Lun Hsin ; Chun-Wei Huang ; Chen-Fang Kang ; Fu-Hsuan Chu ; Jui-Yuan Chen ; Jung-Chih Hu ; Lien-Tai Chen ; Jr-Hau He ; Wen-Wei Wu
• 刊名：Analytical Chemistry
• 出版年：2013
• 出版时间：April 16, 2013
• 年：2013
• 卷：85
• 期：8
• 页码：3955-3960
• 全文大小：380K
• 年卷期：v.85,no.8(April 16, 2013)
• ISSN：1520-6882

文摘

Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.