Controlled Synthesis of Highly Crystalline MoS2 Flakes by Chemical Vapor Deposition

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• 作者：Xinsheng Wang ; Hongbin Feng ; Yongmin Wu ; Liying Jiao
• 刊名：The Journal of the American Chemical Society
• 出版年：2013
• 出版时间：April 10, 2013
• 年：2013
• 卷：135
• 期：14
• 页码：5304-5307
• 全文大小：299K
• 年卷期：v.135,no.14(April 10, 2013)
• ISSN：1520-5126

文摘

The controlled synthesis of highly crystalline MoS₂ atomic layers remains a challenge for the practical applications of this emerging material. Here, we developed an approach for synthesizing MoS₂ flakes in rhomboid shape with controlled number of layers by the layer-by-layer sulfurization of MoO₂ microcrystals. The obtained MoS₂ flakes showed high crystallinity with crystal domain size of 10 渭m, significantly larger than the grain size of MoS₂ grown by other methods. As a result of the high crystallinity, the performance of back-gated field effect transistors (FETs) made on these MoS₂ flakes was comparable to that of FETs based on mechanically exfoliated flakes. This simple approach opens up a new avenue for controlled synthesis of MoS₂ atomic layers and will make this highly crystalline material easily accessible for fundamental aspects and various applications.