High-Mobility Transistors Based on Single Crystals of Isotopically Substituted Rubrene-d28

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• 作者：Wei Xie ; Kathryn A. McGarry ; Feilong Liu ; Yanfei Wu ; P. Paul Ruden ; Christopher J. Douglas ; C. Daniel Frisbie
• 刊名：The Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：June 6, 2013
• 年：2013
• 卷：117
• 期：22
• 页码：11522-11529
• 全文大小：371K
• 年卷期：v.117,no.22(June 6, 2013)
• ISSN：1932-7455

文摘

We have performed a comprehensive study of chemical synthesis, crystal growth, crystal quality, and electrical transport properties of isotopically substituted rubrene-d₂₈ single crystals (D-rubrene, C₄₂D₂₈). Using a modified synthetic route for protonated-rubrene (H-rubrene, C₄₂H₂₈), we have obtained multigram quantities of rubrene with deuterium incorporation approaching 100%. We found that the vapor-grown D-rubrene single crystals, whose high qualities were confirmed by X-ray diffraction and atomic force microscopy, maintained the remarkable transport properties originally manifested by H-rubrene crystals. Specifically, field-effect hole mobility above 10 cm² V^鈥? s^鈥? was consistently achieved in the vacuum-gap transistor architecture at room temperature, with an intrinsic band-like transport behavior observed over a broad temperature range; maximum hole mobility reached 45 cm² V^鈥? s^鈥? near 100 K. Theoretical analysis provided estimates of the density and characteristic energy of shallow and deep traps presented in D-rubrene crystals. Overall, the successful synthesis and characterization of rubrene-d₂₈ paves an important pathway for future spin-transport experiments in which the H/D isotope effect on spin lifetime can be examined in the testbed of rubrene.