文摘
We present atomic-scale imaging of oxygen columns and show quantitative analysis on the occupancy of the columns in yttria-stabilized zirconia (YSZ) using aberration-corrected TEM operated under the negative Cs condition. Also, individual contributions both from oxygen column occupancy and the static displacement of oxygen atoms due to occupancy change to the observed column intensities of TEM images were systematically investigated using HRTEM simulation. We found that oxygen column intensity is governed primarily by column occupancy rather than by static displacement of oxygen atoms. Utilizing the aberration-corrected TEM capability and HRTEM simulation results, we experimentally verified that oxygen vacancies segregate near the single grain boundary of a YSZ bicrystal. The methodology and the high spatial resolution characterization tool employed in the present study provide insights into the distribution of oxygen vacancies in the bulk as well as near grain boundaries and pave the way for further investigation and atomic-scale analysis in other important oxide materials.
Keywords:
aberration-corrected TEM; oxygen vacancy; oxide ion conductor; YSZ; grain boundary