Hybrid Phototransistors Based on Bulk Heterojunction Films of Poly(3-hexylthiophene) and Zinc Oxide Nanoparticle

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• 作者：Sungho Nam ; Jooyeok Seo ; Soohyeong Park ; Sooyong Lee ; Jaehoon Jeong ; Hyena Lee ; Hwajeong Kim ; Youngkyoo Kim
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2013
• 出版时间：February 27, 2013
• 年：2013
• 卷：5
• 期：4
• 页码：1385-1392
• 全文大小：565K
• 年卷期：v.5,no.4(February 27, 2013)
• ISSN：1944-8252

文摘

Hybrid phototransistors (HPTRs) were fabricated on glass substrates using organic/inorganic hybrid bulk heterojunction films of p-type poly(3-hexylthiophene) (P3HT) and n-type zinc oxide nanoparticles (ZnO_NP). The content of ZnO_NP was varied up to 50 wt % in order to understand the composition effect of ZnO_NP on the performance of HPTRs. The morphology and nanostructure of the P3HT:ZnO_NP films was examined by employing high resolution electron microscopes and synchrotron radiation grazing angle X-ray diffraction system. The incident light intensity (P_IN) was varied up to 43.6 渭W/cm², whereas three major wavelengths (525 nm, 555 nm, 605 nm) corresponded to the optical absorption of P3HT were applied. Results showed that the present HPTRs showed typical p-type transistor performance even though the n-type ZnO_NP content increased up to 50 wt %. The highest transistor performance was obtained at 50 wt %, whereas the lowest performance was measured at 23 wt % because of the immature bulk heterojunction morphology. The drain current (I_D) was proportionally increased with P_IN due to the photocurrent generation in addition to the field-effect current. The highest apparent and corrected responsivities (R_A = 4.7 A/W and R_C = 2.07 A/W) were achieved for the HPTR with the P3HT:ZnO_NP film (50 wt % ZnO_NP) at P_IN = 0.27 渭W/cm² (555 nm).

Keywords:

hybrid phototransistors; P3HT; zinc oxide nanoparticles; organic/inorganic bulk heterojunction; morphology; responsivity