Piezotronic Effect in Solution-Grown p-Type ZnO Nanowires and Films

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• 作者：Ken C. Pradel ; Wenzhuo Wu ; Yusheng Zhou ; Xiaonan Wen ; Yong Ding ; Zhong Lin Wang
• 刊名：Nano Letters
• 出版年：2013
• 出版时间：June 12, 2013
• 年：2013
• 卷：13
• 期：6
• 页码：2647-2653
• 全文大小：424K
• 年卷期：v.13,no.6(June 12, 2013)
• ISSN：1530-6992

文摘

Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 渭m in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the p-type nanowire field effect transistor, the on/off ratio, threshold voltage, mobility, and carrier concentration of 0.2% Sb-doped sample are found to be 10⁵, 2.1 V, 0.82 cm²路V^鈥?路s^鈥?, and 2.6 脳 10¹⁷ cm^鈥?, respectively, and the corresponding values for 1% Sb doped samples are 10⁴, 2.0 V, 1.24 cm²路V^鈥?路s^鈥?, and 3.8 脳 10¹⁷ cm^鈥?. We further investigated the universality of piezotronic effect in the as-synthesized Sb-doped p-type ZnO NWs and reported for the first time strain-gated piezotronic transistors as well as piezopotential-driven mechanical energy harvesting based on solution-grown p-type ZnO NWs. The results presented here broaden the scope of piezotronics and extend the framework for its potential applications in electronics, optoelectronics, smart MEMS/NEMS, and human-machine interfacing.

Keywords:

p-type ZnO nanowire; piezotronic effect; piezotronics; piezo-phototronics; energy harvesting