Integration of Self-Assembled Vertically Aligned Nanocomposite (La0.7Sr0.3MnO3)1鈥?i>x:(ZnO)x Thin Films on Silicon Substrates

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• 作者：Wenrui Zhang ; Aiping Chen ; Fauzia Khatkhatay ; Chen-Fong Tsai ; Qing Su ; Liang Jiao ; Xinghang Zhang ; Haiyan Wang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2013
• 出版时间：May 22, 2013
• 年：2013
• 卷：5
• 期：10
• 页码：3995-3999
• 全文大小：320K
• 年卷期：v.5,no.10(May 22, 2013)
• ISSN：1944-8252

文摘

Epitaxial (La_0.7Sr_0.3MnO₃)_1鈥?i>x:(ZnO)_x (LSMO:ZnO) in vertically aligned nanocomposite (VAN) form was integrated on STO/TiN-buffered silicon substrates by pulsed-laser deposition. Their magnetotransport properties have been investigated and are systematically tuned through controlling the ZnO concentration. The composite film with 70% ZnO molar ratio exhibits a maximum magnetoresistance (MR) value of 55% at 70 K and 1 T. The enhanced tunable low-field MR properties are attributed to structural and magnetic disorders and spin-polarized tunneling through the secondary ZnO phase. The integration of LSMO:ZnO VAN films on silicon substrates is a critical step enabling the application of VAN films in future spintronic devices.

Keywords:

vertically aligned nanocomposites (VAN); epitaxy; thin films; low-field magnetoresistance (LFMR); pulsed-laser deposition; spintronics