Surface-Doping Effect of InVO4 Nanoribbons and the Distinctive Behavior as Gas Sensors

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• 作者：Shanshan Liu ; Fei Hu ; Jie Zhang ; Hanxiao Tang ; Mingwang Shao
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2013
• 出版时间：April 24, 2013
• 年：2013
• 卷：5
• 期：8
• 页码：3208-3211
• 全文大小：261K
• 年卷期：v.5,no.8(April 24, 2013)
• ISSN：1944-8252

文摘

Indium vanadate (InVO₄) gas sensors were fabricated by depositing InVO₄ nanoribbons aqueous suspension onto ceramic substrates. Their resistances distinctively increased in the detection of ammonia and propylamine, indicating an n-to-p semiconductor transition. This novel phenomenon of the InVO₄-based sensor may be ascribed to the surface doping effect: electrons were trapped by H₂O and O₂ and produced OH鈥?/sup> and O₂鈥?/sup> on the InVO₄ surface, which resulted in holes overcompensation in the InVO₄ valence band. Moreover, the sufficiently large surface-to-volume ratio of these nanoribbons enables fast carrier transfer on the sensor surface. The InVO₄ nanoribbons-based sensors had optimum performance at room temperature and enjoyed good restorability. They also had great response to a wide range of target gas concentration, with ultrahigh sensitivities up to 1100% for ammonia and 760% for propylamine.

Keywords:

InVO₄; nanoribbon; gas sensor; propylamine; ammonia