Enhanced Performance of Solution-Processed Organic Thin-Film Transistors with a Low-Temperature-Annealed Alumina Interlayer between the Polyimide Gate Insulator and the Semiconductor

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• 作者：Jun-Young Yoon ; Sunho Jeong ; Sun Sook Lee ; Yun Ho Kim ; Jae-Won Ka ; Mi Hye Yi ; Kwang-Suk Jang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2013
• 出版时间：June 12, 2013
• 年：2013
• 卷：5
• 期：11
• 页码：5149-5155
• 全文大小：389K
• 年卷期：v.5,no.11(June 12, 2013)
• ISSN：1944-8252

文摘

We studied a low-temperature-annealed sol鈥揼el-derived alumina interlayer between the organic semiconductor and the organic gate insulator for high-performance organic thin-film transistors. The alumina interlayer was deposited on the polyimide gate insulator by a simple spin-coating and 200 掳C-annealing process. The leakage current density decreased by the interlayer deposition: at 1 MV/cm, the leakage current densities of the polyimide and the alumina/polyimide gate insulators were 7.64 脳 10^鈥? and 3.01 脳 10^鈥? A/cm², respectively. For the first time, enhancement of the organic thin-film transistor performance by introduction of an inorganic interlayer between the organic semiconductor and the organic gate insulator was demonstrated: by introducing the interlayer, the field-effect mobility of the solution-processed organic thin-film transistor increased from 0.35 卤 0.15 to 1.35 卤 0.28 cm²/V路s. Our results suggest that inorganic interlayer deposition could be a simple and efficient surface treatment of organic gate insulators for enhancing the performance of solution-processed organic thin-film transistors.

Keywords:

gate insulators; solution process; spin-coating; interlayer; organic thin-film transistors