Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

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• 作者：Dung-Sheng Tsai ; Keng-Ku Liu ; Der-Hsien Lien ; Meng-Lin Tsai ; Chen-Fang Kang ; Chin-An Lin ; Lain-Jong Li ; Jr-Hau He
• 刊名：ACS Nano
• 出版年：2013
• 出版时间：May 28, 2013
• 年：2013
• 卷：7
• 期：5
• 页码：3905-3911
• 全文大小：395K
• 年卷期：v.7,no.5(May 28, 2013)
• ISSN：1936-086X

文摘

Few-layered MoS₂ as Schottky metal鈥搒emiconductor鈥搈etal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to 10¹⁰ cm Hz^1/2/W), fast photoresponse (rise time of 70 渭s and fall time of 110 渭s), and high thermal stability (at a working temperature of up to 200 掳C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS₂ at 532 nm is due to the high optical absorption (10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.

Keywords:

graphene; MoS₂; photodetector; high-temperature detection; harsh environment