Interaction of Boron and Phosphorus Impurities in Silicon Nanowires during Low-Temperature Ozone Oxidation

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• 作者：Naoki Fukata ; Jun Kaminaga ; Ryo Takiguchi ; Riccardo Rurali ; Mrinal Dutta ; Kouichi Murakami
• 刊名：Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：October 3, 2013
• 年：2013
• 卷：117
• 期：39
• 页码：20300-20307
• 全文大小：541K
• 年卷期：v.117,no.39(October 3, 2013)
• ISSN：1932-7455

文摘

In doped Si nanowires (SiNWs) boron (B) atoms segregate to the surface oxide layers during thermal oxidation, while phosphorus (P) atoms preferentially pile up in Si crystalline regions close to the Si/SiO₂ interface. Here we report on micro-Raman scattering and electron spin resonance (ESR) measurements showing that B atoms can be stabilized at the crystalline Si core region in codped SiNWs with average diameters of 20鈥?0 nm because of the strong interaction between B and P atoms during thermal oxidation below 800 掳C. Theoretical calculation clearly demonstrated the effect of B鈥揚 pairing, which can stabilize the B atoms in the Si side. In the B鈥揚 pairing configuration, dopant passivation鈥攂eyond simple compensation鈥攐ccurs, making the impurities electrically inactive.