Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence on Surface Termination

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• 作者：Stephen McDonnell ; Roberto C. Longo ; Oliver Seitz ; Josh B. Ballard ; Greg Mordi ; Don Dick ; James H. G. Owen ; John N. Randall ; Jiyoung Kim ; Yves J. Chabal ; Kyeongjae Cho ; Robert M. Wallace
• 刊名：Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：October 3, 2013
• 年：2013
• 卷：117
• 期：39
• 页码：20250-20259
• 全文大小：519K
• 年卷期：v.117,no.39(October 3, 2013)
• ISSN：1932-7455

文摘

Patterned fabrication depends on selective deposition that can be best achieved with atomic layer deposition (ALD). For the growth of TiO₂ by ALD using TiCl₄ and H₂O, X-ray photoelectron spectroscopy reveals a marked difference in growth on oxidized and hydrogen-terminated silicon surfaces, characterized by typical and predictable deposition rates observed on SiO₂ surfaces that can be 185 times greater than the deposition rates on hydrogen-terminated Si(100) and Si(111) surfaces. Large-scale patterning is demonstrated using wet chemistry, and nanometer-scale patterned TiO₂ growth is achieved through scanning tunneling microscopy (STM) tip-based lithography and ALD. The initial adsorption mechanisms of TiCl₄ on clean, hydrogen-terminated, and OH-terminated Si(100)-(2 脳 1) surfaces are investigated in detail through density functional theory calculations. Varying the reactive groups on the substrate is found to strongly affect the probability of precursor nucleation on the surface during the ALD process. Theoretical studies provide quantitative understanding of the experimental differences obtained for the SiO₂, hydrogen-terminated, and clean Si(100) and Si(111) surfaces.