Laser-Induced Solid-Phase Doped Graphene

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• 作者：Insung Choi ; Hu Young Jeong ; Dae Yool Jung ; Myunghwan Byun ; Choon-Gi Choi ; Byung Hee Hong ; Sung-Yool Choi ; Keon Jae Lee
• 刊名：ACS Nano
• 出版年：2014
• 出版时间：August 26, 2014
• 年：2014
• 卷：8
• 期：8
• 页码：7671-7677
• 全文大小：427K
• ISSN：1936-086X

文摘

There have been numerous efforts to improve the performance of graphene-based electronic devices by chemical doping. Most studies have focused on gas-phase doping with chemical vapor deposition. However, that requires a complicated transfer process that causes undesired doping and defects by residual polymers. Here, we report a solid-phase synthesis of doped graphene by means of silicon carbide (SiC) substrate including a dopant source driven by pulsed laser irradiation. This method provides in situ direct growth of doped graphene on an insulating SiC substrate without a transfer step. A numerical simulation on the temperature history of the SiC surface during laser irradiation reveals that the surface temperature of SiC can be accurately controlled to grow nitrogen-doped graphene from the thermal decomposition of nitrogen-doped SiC. Laser-induced solid-phase doped graphene is highly promising for the realization of graphene-based nanoelectronics with desired functionalities.

Keywords:

solid-phase synthesis; nitrogen-doped graphene; laser; silicon carbide