Bulk Silicon Crystals with the High Boron Content, Si1鈥?i>xBx: Two Semiconductors Form an Unusual Metal

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• 作者：Sergey V. Ovsyannikov ; Huiyang Gou ; Alexander E. Karkin ; Vladimir V. Shchennikov ; Richard Wirth ; Vladimir Dmitriev ; Yoichi Nakajima ; Natalia Dubrovinskaia ; Leonid S. Dubrovinsky
• 刊名：Chemistry of Materials
• 出版年：2014
• 出版时间：September 23, 2014
• 年：2014
• 卷：26
• 期：18
• 页码：5274-5281
• 全文大小：649K
• ISSN：1520-5002

文摘

Silicon is a key technological material, and its controlled doping is one of the simple and effective ways which are applied for creation of new advanced materials with tunable optoelectronic properties. Boron was known to be a dopant that can dramatically change the properties of silicon. However, a limited solubility of boron atoms in silicon matrix strongly restricted creation of bulk diamond-type structured Si鈥揃 alloys with the high boron content exceeding 0.5鈥? at. %. In this work we show that bulk Si_1鈥?i>xB_x alloys with a rather high boron content (e.g., 2.4 at. %) may be fabricated by alloying of boron and silicon at high temperatures above the melting point of silicon and high pressure. We extensively investigated the electronic transport and optical properties of these alloys using several techniques, including electrical resistivity, Hall effect, magnetoresistance, Raman, IR and optical spectroscopy, and X-ray diffraction. We found that Si_1鈥?i>xB_x solid solutions are metals that possess very unusual optical properties, e.g., they demonstrate the antiresonant Raman spectra and the loss of the reflectivity in the near-IR range. Our work indicates new perspectives in creation and applications of Si_1鈥?i>xB_x solid solutions with the diamond-type structure.