Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

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• 作者：Xiaoyin Xiao ; Arthur J. Fischer ; George T. Wang ; Ping Lu ; Daniel D. Koleske ; Michael E. Coltrin ; Jeremy B. Wright ; Sheng Liu ; Igal Brener ; Ganapathi S. Subramania ; Jeffrey Y. Tsao
• 刊名：Nano Letters
• 出版年：2014
• 出版时间：October 8, 2014
• 年：2014
• 卷：14
• 期：10
• 页码：5616-5620
• 全文大小：304K
• ISSN：1530-6992

文摘

We demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. We show that quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and that the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. Low-temperature photoluminescence from ensembles of such QDs have peak wavelengths that can be tunably blue shifted by 35 nm (from 440 to 405 nm) and have line widths that narrow by 3 times (from 19 to 6 nm).

Keywords:

Quantum dots; InGaN; photoelectrochemical etching; quantum-size effects