Quasi-Freestanding Monolayer Heterostructure of Graphene and Hexagonal Boron Nitride on Ir(111) with a Zigzag Boundary

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• 作者：Mengxi Liu ; Yuanchang Li ; Pengcheng Chen ; Jingyu Sun ; Donglin Ma ; Qiucheng Li ; Teng Gao ; Yabo Gao ; Zhihai Cheng ; Xiaohui Qiu ; Ying Fang ; Yanfeng Zhang ; Zhongfan Liu
• 刊名：Nano Letters
• 出版年：2014
• 出版时间：November 12, 2014
• 年：2014
• 卷：14
• 期：11
• 页码：6342-6347
• 全文大小：491K
• ISSN：1530-6992

文摘

In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a focus of graphene research owing to its tunable bandgap and intriguing properties. We report herein the synthesis of a quasi-freestanding h-BN-G monolayer heterostructure on a weakly coupled Ir(111) substrate, where graphene and h-BN possess distinctly different heights and surface corrugations. An atomically sharp zigzag type boundary has been found to dominate the patching interface between graphene and h-BN, as evidenced by high-resolution Scanning tunneling microscopy investigation as well as density functional theory calculation. Scanning tunneling spectroscopy studies indicate that the graphene and h-BN tend to exhibit their own intrinsic electronic features near the patching boundary. The present work offers a deep insight into the h-BN-graphene boundary structures both geometrically and electronically together with the effect of adlayer-substrate coupling.

Keywords:

STM; graphene; h-BN; in-plane heterostructure; boundary type