Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

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• 作者：Lingming Yang ; Kausik Majumdar ; Han Liu ; Yuchen Du ; Heng Wu ; Michael Hatzistergos ; P. Y. Hung ; Robert Tieckelmann ; Wilman Tsai ; Chris Hobbs ; Peide D. Ye
• 刊名：Nano Letters
• 出版年：2014
• 出版时间：November 12, 2014
• 年：2014
• 卷：14
• 期：11
• 页码：6275-6280
• 全文大小：336K
• ISSN：1530-6992

文摘

Low-resistivity metal鈥搒emiconductor (M鈥揝) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (R_c) in the few-layer WS₂ and MoS₂. After doping, the R_c of WS₂ and MoS₂ have been decreased to 0.7 k惟路渭m and 0.5 k惟路渭m, respectively. The significant reduction of the R_c is attributed to the achieved high electron-doping density, thus a significant reduction of Schottky barrier width. As a proof-of-concept, high-performance few-layer WS₂ field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 渭A/渭m, an on/off ratio of 4 脳 10⁶, and a peak field-effect mobility of 60 cm²/(V路s). This doping technique provides a highly viable route to diminish the R_c in TMDs, paving the way for high-performance 2D nanoelectronic devices.

Keywords:

molecular doping; WS₂; MoS₂; TMDs; contact resistance; Schottky barrier