Fully Porous GaN p鈥搉 Junction Diodes Fabricated by Chemical Vapor Deposition

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• 作者：Oleksandr V. Bilousov ; Joan J. Carvajal ; Hugh Geaney ; Vitaly Z. Zubialevich ; Peter J. Parbrook ; Oscar Mart铆nez ; Juan Jim茅nez ; Francesc D铆az ; Magdalena Aguil贸 ; Colm O鈥橠wyer
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2014
• 出版时间：October 22, 2014
• 年：2014
• 卷：6
• 期：20
• 页码：17954-17964
• 全文大小：610K
• ISSN：1944-8252

文摘

Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increases the price of the final system. Also, the penetration depth of these etching techniques is limited, and affects not only the semiconductor but also the other elements constituting the LED when applied to the final device. In this paper, we present the fabrication of fully porous GaN p鈥搉 junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p鈥搉 junction. We characterized their diode behavior from room temperature to 673 K and demonstrated their ability as current rectifiers, thus proving the potential of these fully porous p鈥搉 junctions for diode and LEDs applications. The electrical and luminescence characterization confirm that high electronic quality porous structures can be obtained by this method, and we believe this investigation can be extended to other III鈥揘 materials for the development of white light LEDs, or to reduce reflection losses and narrowing the output light cone for improved LED external quantum efficiencies.

Keywords:

porous GaN; porous p鈭抧 junction diode; light emitting diodes; chemical vapor deposition; epitaxial growth