Synthesis and Characterization of Monodispersed 尾-Ga2O3 Nanospheres via Morphology Controlled Ga4(OH)10SO4 Precursors

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• 作者：Bong Kyun Kang ; Hyeong Dae Lim ; Sung Ryul Mang ; Keun Man Song ; Mong Kwon Jung ; Sang-Woo Kim ; Dae Ho Yoon
• 刊名：Langmuir
• 出版年：2015
• 出版时间：January 20, 2015
• 年：2015
• 卷：31
• 期：2
• 页码：833-838
• 全文大小：424K
• ISSN：1520-5827

文摘

To our best knowledge, monodispersed 尾-Ga₂O₃ nanospheres were successfully synthesized for first time via morphology-controlled gallium precursors using the forced hydrolysis method, followed by thermal calcination processes. The morphology and particle sizes of the gallium precursors were strongly dependent on the varying (R = SO₄^{2鈥?/sup>/NO₃鈥?/sup>) concentration ratios. As R decreased, the size of the prepared gallium precursors decreased and morphology was altered from sphere to rod. The synthesized S2 (R = 0.33) consists of uniform and monodispersed amorphous nanospheres with diameters of about 200 nm. The monodispersed 尾-Ga₂O₃ nanospheres were synthesized using thermal calcination processes at various temperatures ranging from 500 to 1000 掳C. Monodispersed 尾-Ga₂O₃ nanospheres (200 nm) consist of small particles of approximately 10鈥?0 nm with rough surface at 1000 掳C for 1 h. The UV (375 nm) and broad blue (400鈥?50 nm) emission indicate recombination via a self-trapped exciton and the defect band emission. Our approach described here is to show the exploration of 尾-Ga₂O₃ nanospheres as an automatic dispersion, three-dimensional support for fabrication of hierarchical materials, which is potentially important for a broad range of optoelectronic applications.}