Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

详细信息    查看全文

• 作者：Kai-De Liang ; Chi-Hsin Huang ; Chih-Chung Lai ; Jian-Shiou Huang ; Hung-Wei Tsai ; Yi-Chung Wang ; Yu-Chuan Shih ; Mu-Tung Chang ; Shen-Chuan Lo ; Yu-Lun Chueh
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2014
• 出版时间：October 8, 2014
• 年：2014
• 卷：6
• 期：19
• 页码：16537-16544
• 全文大小：523K
• ISSN：1944-8252

文摘

CuO_x nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature and its resistive switching has been demonstrated. The switching characteristic exhibits forming-free and low electric-field switching operation due to coexistence of significant amount of defects and Cu nanocrystals in the partially oxidized nanowires. The detailed resistive switching characteristics of CuO_x nanowire systems have been investigated and possible switching mechanisms are systematically proposed based on the microstructural and chemical analysis via transmission electron microscopy.

Keywords:

CuO_x nanowire; ReRAM; AAO membrane; resistive switching; forming free; memristor