Study on the Resistance Distribution at the Contact between Molybdenum Disulfide and Metals

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• 作者：Yao Guo ; Yuxiang Han ; Jiapeng Li ; An Xiang ; Xianlong Wei ; Song Gao ; Qing Chen
• 刊名：ACS Nano
• 出版年：2014
• 出版时间：August 26, 2014
• 年：2014
• 卷：8
• 期：8
• 页码：7771-7779
• 全文大小：592K
• ISSN：1936-086X

文摘

Contact resistance hinders the high performance of electrical devices, especially devices based on two-dimensional (2D) materials, such as graphene and transition metal dichalcogenide. To engineer contact resistance, understanding the resistance distribution and carrier transport behavior at the contact area is essential. Here, we developed a method that can be used to obtain some key parameters of contact, such as transfer length (L_t), sheet resistance of the 2D materials beneath the contacting metal (R_sh), and contact resistivity between the 2D materials and the metal electrode (蟻_c). Using our method, we studied the contacts between molybdenum disulfide (MoS₂) and metals, such as titanium and gold, in bilayer and few-layered MoS₂ devices. Especially, we found that R_sh is obviously larger than the sheet resistance of the same 2D materials in the channel (R_ch) in all the devices we studied. With the increasing of the back-gate voltage, L_t increases and R_sh, 蟻_c, R_ch, and the contact resistance R_c decrease in all the devices we studied. Our results are helpful for understanding the metal鈥揗oS₂ contact and improving the performances of MoS₂ devices.

Keywords:

MoS₂; FET; contact resistance; two-dimensional materials; transfer length