Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection

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• 作者：Yung-Huang Chang ; Wenjing Zhang ; Yihan Zhu ; Yu Han ; Jiang Pu ; Jan-Kai Chang ; Wei-Ting Hsu ; Jing-Kai Huang ; Chang-Lung Hsu ; Ming-Hui Chiu ; Taishi Takenobu ; Henan Li ; Chih-I Wu ; Wen-Hao Chang ; Andrew Thye Shen Wee ; Lain-Jong Li
• 刊名：ACS Nano
• 出版年：2014
• 出版时间：August 26, 2014
• 年：2014
• 卷：8
• 期：8
• 页码：8582-8590
• 全文大小：590K
• ISSN：1936-086X

文摘

Monolayer molybdenum disulfide (MoS₂) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS₂ devices. Here, highly crystalline molybdenum diselenide (MoSe₂) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS₂ and MoSe₂ monolayers reveals that the MoSe₂ monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe₂ presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS₂ monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS₂. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe₂ and MoS₂ and is useful for guiding future designs in 2D material-based optoelectronic devices.

Keywords:

transition metal dichalcogenides; photoresponse; MoSe₂; MoS₂; two-dimensional materials