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Cs2Hg3S4: A Low-Dimensional Direct Bandgap Semiconductor
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Cs2Hg3S4 was synthesized by slowly cooling a melted stoichiometric mixture of Hg and Cs2S4. Cs2Hg3S4 crystallizes in the Ibam spacegroup with a = 6.278(1) 脜, b = 11.601(2) 脜, and c = 14.431(3)脜; dcalc = 6.29 g/cm3. Its crystal structure consists of straight chains of [Hg3S4]n2n鈥?/sup> that engage in side-by-side weak bonding interactions forming layers and are charge balanced by Cs+ cations. The thermal stability of this compound was investigated with differential thermal analysis and temperature dependent in situ synchrotron powder diffraction. The thermal expansion coefficients of the a, b, and c axes were assessed at 1.56 脳 10鈥?, 2.79 脳 10鈥?, and 3.04 脳 10鈥? K鈥?, respectively. Large single-crystals up to 鈭? cm in length and 鈭? cm in diameter were grown using a vertical Bridgman method. Electrical conductivity and photoconductivity measurements on naturally cleaved crystals of Cs2Hg3S4 gave resistivity 蟻 of 鈮?08 惟路cm and carrier mobility-lifetime (渭蟿) products of 4.2 脳 10鈥? and 5.82 脳 10鈥? cm2 V鈥? for electrons and holes, respectively. Cs2Hg3S4 is a semiconductor with a bandgap Eg 鈭?2.8 eV and exhibits photoluminescence (PL) at low temperature. Electronic band structure calculations within the density functional theory (DFT) framework employing the nonlocal hybrid functional within Heyd鈥揝cuseria鈥揈rnzerhof (HSE) formalism indicate a direct bandgap of 2.81 eV at 螕. The theoretical calculations show that the conduction band minimum has a highly dispersive and relatively isotropic mercury-based s-orbital-like character while the valence band maximum features a much less dispersive and more anisotropic sulfur orbital-based band.

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