文摘
Forward and back electron transfer at dye鈥搒emiconductor interfaces are pivotal events in dye-sensitized solar cells and dye-sensitized photoelectrosynthesis cells. Here we introduce self-assembled bilayers as a strategy for manipulating electron transfer dynamics at these interfaces. The bilayer films are achieved by stepwise layering of bridging molecules, linking ions, and dye molecules on the metal oxide surface. The formation of the proposed architecture is supported by ATR-IR and UV鈥搗is spectroscopy. By using time-resolved emission and transient absorption, we establish that the films exhibit an exponential decrease in electron transfer rate with increasing bridge length. The findings indicate that self-assembled bilayers offer a simple, straightforward, and modular method for manipulating electron transfer dynamics at dye鈥搒emiconductor interfaces.