Synthesis of Lateral Heterostructures of Semiconducting Atomic Layers

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• 作者：Xin-Quan Zhang ; Chin-Hao Lin ; Yu-Wen Tseng ; Kuan-Hua Huang ; Yi-Hsien Lee
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：January 14, 2015
• 年：2015
• 卷：15
• 期：1
• 页码：410-415
• 全文大小：399K
• ISSN：1530-6992

文摘

Atomically thin heterostructures of transition-metal dichalcogenides (TMDs) with various geometrical and energy band alignments are the key materials for next generation flexible nanoelectronics. The individual TMD monolayers can be adjoined laterally to construct in-plane heterostructures, which are difficult to reach with the laborious pick-up-and-transfer method of the exfoliated flakes. The ability to produce copious amounts of high quality layered heterostructures on diverse surfaces is highly desirable but it has remained a challenging issue. Here, we have achieved a direct synthesis of lateral heterostructures of monolayer TMDs: MoS₂鈥揥S₂ and MoSe₂鈥揥Se₂. The synthesis was performed using ambient-pressure chemical vapor deposition (CVD) with aromatic molecules as seeding promoters. We discuss possible growth behaviors, and we examine the symmetry and the interface of these heterostructures using second-harmonic generation and atomic-resolution scanning TEM. We found that the one-dimensinal (1D) interface of the lateral heterostructures picks the zigzag direction of the lattice instead of the armchair direction. Our method offers a controllable synthesis to obtain high-quality in-plane heterostructures of TMD atomic layers with 1D interface geometry.