Self-Assembling VO2 Nanonet with High Switching Performance at Wafer-Scale

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• 作者：Jiasong Zhang ; Haibo Jin ; Zhuo Chen ; Maosheng Cao ; Pengwan Chen ; Yankun Dou ; Yongjie Zhao ; Jingbo Li
• 刊名：Chemistry of Materials
• 出版年：2015
• 出版时间：November 10, 2015
• 年：2015
• 卷：27
• 期：21
• 页码：7419-7424
• 全文大小：526K
• ISSN：1520-5002

文摘

Technologically controlling nanostructures is essential to tailoring the functionalities and properties of nanomaterials. Various methods free from lithography-based techniques have been employed to fabricate 2D nanostructures; however it is still hard to achieve a well interconnected 2D regular nanostructure. Here, we demonstrate a facile chemical solution method to self-assemble a regular and interconnected VO₂ nanonet on the wafer scale. The nanonet shows a well-defined 2D truss network constructed by VO₂ nanorods with twinning relationships. The growth direction and crystallographic orientation of nanorods are synchronously controlled, leading to horizontally epitaxial growth of nanorods along three symmetric directions of the (001) single-crystal sapphire substrate. The unique nanonets enable the acquisition of excellent resistance switching properties and dramatic fatigue endurance. A large resistance change of near 5 orders with a 1.7 掳C width of the hysteresis loop is characterized comparably to the properties of single crystals without detectable degradation after 500 cycles over the metal-to-insulator transition. It indicates that the nanonet can serve as an exceptional candidate for practical application in switching functional devices. Our findings offer a novel pathway for self-assembly of 2D ordered nanostructures, which would provide new opportunities for the bottom-up integration of nanodevices.