H2-Dependent Carbon Dissolution and Diffusion-Out in Graphene Chemical Vapor Deposition Growth

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• 作者：Baoshan Hu ; Yan Jin ; Dongjie Guan ; Zhengtang Luo ; Bo Shang ; Qianrui Fang ; Haibo Ruan
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：October 22, 2015
• 年：2015
• 卷：119
• 期：42
• 页码：24124-24131
• 全文大小：620K
• ISSN：1932-7455

文摘

Highlighting the roles of H₂ on the carbon dissolution and diffusion-out unit steps in the metal substrate is highly imperative to constitute a whole puzzle elucidating how the H₂ affects the graphene chemical vapor deposition (CVD) growth, taking into account that the effects of H₂ on the surface process have been intensively emphasized. In this article, we designed a series of graphene growth experiments by introducing the H₂ in the individual unit step on the Cu and Co films as a comparison due to their distinctively intrinsic carbon solubility. We investigated the effects of H₂ on the crystallographic structure, surface morphology, and chemical environment of metal substrates, and the thickness and quality of as-grown graphene films. We also established the theoretical models to monitor the interaction between carbon and metal atoms with and without H₂. Our results demonstrate that the H₂ predissolution could suppress the carbon dissolution in the Cu film and enhance the diffusion-out of dissolved carbon atoms, whereas in the Co film the converse would occur.