Effects of Interface Layers and Domain Walls on the Ferroelectric-Resistive Switching Behavior of Au/BiFeO3/La0.6Sr0.4MnO3 Heterostructures

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• 作者：Lei Feng ; Shengwei Yang ; Yue Lin ; Dalong Zhang ; Weichuan Huang ; Wenbo Zhao ; Yuewei Yin ; Sining Dong ; Xiaoguang Li
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：December 2, 2015
• 年：2015
• 卷：7
• 期：47
• 页码：26036-26042
• 全文大小：409K
• ISSN：1944-8252

文摘

The electric field effects on the electric and magnetic properties in multiferroic heterostructures are important for not only understanding the mechanisms of certain novel physical phenomena occurring at heterointerfaces but also offering a route for promising spintronic applications. Using the Au/BiFeO₃/La_0.6Sr_0.4MnO₃ (Au/BFO/LSMO) multiferroic heterostructure as a model system, we investigated the ferroelectric-resistive switching (RS) behaviors of the heterostructure. Via the manipulation of the BFO ferroelectric polarizations, the nonvolatile tristate of RS is observed, which is closely related to the Au/BFO and BFO/LSMO interface layers and the highly conducting BFO domain walls (DWs). More interestingly, according to the magnetic field dependence of the RS behavior, the negative magnetoresistance effect of the third resistance state, corresponding to the abnormal current peak in current-pulse voltage hysteresis near the electric coercive field, is also observed at room temperature, which mainly arises from the possible oxygen vacancy accumulation and Fe ion valence variation in the DWs.