Investigation of the Interaction between Perovskite Films with Moisture via in Situ Electrical Resistance Measurement

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• 作者：Long Hu ; Gang Shao ; Tao Jiang ; Dengbing Li ; Xinlin Lv ; Hongya Wang ; Xinsheng Liu ; Haisheng Song ; Jiang Tang ; Huan Liu
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：November 18, 2015
• 年：2015
• 卷：7
• 期：45
• 页码：25113-25120
• 全文大小：510K
• ISSN：1944-8252

文摘

Organometal halide perovskites have recently emerged as outstanding semiconductors for solid-state optoelectronic devices. Their sensitivity to moisture is one of the biggest barriers to commercialization. In order to identify the effect of moisture in the degradation process, here we combined the in situ electrical resistance measurement with time-resolved X-ray diffraction analysis to investigate the interaction of CH₃NH₃PbI_3鈭?i>xCl_x perovskite films with moisture. Upon short-time exposure, the resistance of the perovskite films decreased and it could be fully recovered, which were ascribed to a mere chemisorption of water molecules, followed by the reversible hydration into CH₃NH₃PbI_3鈥?i>xCl_x路H₂O. Upon long-time exposure, however, the resistance became irreversible due to the decomposition into PbI₂. The results demonstrated the formation of monohydrated intermediate phase when the perovskites interacted with moisture. The role of moisture in accelerating the thermal degradation at 85 掳C was also demonstrated. Furthermore, our study suggested that the perovskite films with fewer defects may be more inherently resistant to moisture.