Clear Experimental Demonstration of Hole Gas Accumulation in Ge/Si Core鈥揝hell Nanowires

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• 作者：Naoki Fukata ; Mingke Yu ; Wipakorn Jevasuwan ; Toshiaki Takei ; Yoshio Bando ; Wenzhuo Wu ; Zhong Lin Wang
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：December 22, 2015
• 年：2015
• 卷：9
• 期：12
• 页码：12182-12188
• 全文大小：625K
• ISSN：1936-086X

文摘

Selective doping and band-offset in germanium (Ge)/silicon (Si) core鈥搒hell nanowire (NW) structures can realize a type of high electron mobility transistor structure in one-dimensional NWs by separating the carrier transport region from the impurity-doped region. Precise analysis, using Raman spectroscopy of the Ge optical phonon peak, can distinguish three effects: the phonon confinement effect, the stress effect due to the heterostructures, and the Fano effect. The Fano effect is the most important to demonstrate hole gas accumulation in Ge/Si core鈥搒hell NWs. Using these techniques, we obtained conclusive evidence of the hole gas accumulation in Ge/Si core鈥搒hell NWs. The control of hole gas concentration can be realized by changing the B-doping concentration in the Si shell.