Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy

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• 作者：Yung-Chang Lin ; Hannu-Pekka Komsa ; Chao-Hui Yeh ; Torbj枚rn Bj枚rkman ; Zheng-Yong Liang ; Ching-Hwa Ho ; Ying-Sheng Huang ; Po-Wen Chiu ; Arkady V. Krasheninnikov ; Kazu Suenaga
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：November 24, 2015
• 年：2015
• 卷：9
• 期：11
• 页码：11249-11257
• 全文大小：930K
• ISSN：1936-086X

文摘

Rhenium disulfide (ReS₂) and diselenide (ReSe₂), the group 7 transition metal dichalcogenides (TMDs), are known to have a layered atomic structure showing an in-plane motif of diamond-shaped-chains (DS-chains) arranged in parallel. Using a combination of transmission electron microscopy and transport measurements, we demonstrate here the direct correlation of electron transport anisotropy in single-layered ReS₂ with the atomic orientation of the DS-chains, as also supported by our density functional theory calculations. We further show that the direction of conducting channels in ReS₂ and ReSe₂ can be controlled by electron beam irradiation at elevated temperatures and follows the strain induced to the sample. Furthermore, high chalcogen deficiency can induce a structural transformation to a nonstoichiometric phase, which is again strongly direction-dependent. This tunable in-plane transport behavior opens up great avenues for creating nanoelectronic circuits in 2D materials.