Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices

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• 作者：Il-Kwon Oh ; Jukka Tanskanen ; Hanearl Jung ; Kangsik Kim ; Mi Jin Lee ; Zonghoon Lee ; Seoung-Ki Lee ; Jong-Hyun Ahn ; Chang Wan Lee ; Kwanpyo Kim ; Hyungjun Kim ; Han-Bo-Ram Lee
• 刊名：Chemistry of Materials
• 出版年：2015
• 出版时间：September 8, 2015
• 年：2015
• 卷：27
• 期：17
• 页码：5868-5877
• 全文大小：567K
• ISSN：1520-5002

文摘

We investigated nucleation and growth characteristics of atomic layer deposition (ALD) HfO₂ on exfoliated and chemical vapor deposition (CVD) graphene by using two Hf precursors, tetrakis(dimethylamino)hafnium (TDMAH) and hafnium tetrachloride (HfCl₄). Experimental results and theoretical calculations indicate that HfO₂ nucleation is more favorable on CVD graphene than on exfoliated graphene due to the existence of defect sites. Also, the TDMAH precursor showed much more unfavorable nucleation and growth than HfCl₄ due to different initial adsorption mechanisms, affecting lower leakage currents and breakdown electric field. ALD growth characteristics of HfO₂ will be fundamentally and practically significant for realizing the fabrication of graphene-based electronic devices.