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Managing Carrier Lifetime and Doping Property of Lead Halide Perovskite by Postannealing Processes for Highly Efficient Perovskite Solar Cells
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文摘
The carrier lifetime and the doping property of the lead halide perovskites are essential factors determining their application in solar cells. Hence, these two factors of the perovskite (CH3NH3PbI3) film were managed by postannealing, and the underlying mechanisms governing their effects on the photovoltaic performance of the solar cells were investigated. The short carrier lifetime from electron-hole bimolecular recombination, corresponding to the fast decay of photoluminescence, is achieved in perovskite films annealed at high temperatures. The doping property of the perovskite varies from p-type, intrinsic to n-type with increasing annealing temperature. The short carrier lifetime and the intrinsic feature of the perovskite benefit for high open circuit voltage of the corresponding solar cells, whereas the n-type doped perovskite leads to the high photocurrent and efficiency. Through the management of the carrier lifetime and the doping property, highly efficient perovskite solar cells with conversion efficiency over 17% were prepared. These results provide new insights into the underlying relations between the perovskite properties and the device performance.

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