Quasi-Two-Dimensional SiC and SiC2: Interaction of Silicon and Carbon at Atomic Thin Lattice Plane

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• 作者：Shisheng Lin ; Shengjiao Zhang ; Xiaoqiang Li ; Wenli Xu ; Xiaodong Pi ; Xiaoyi Liu ; Fengchao Wang ; Hengan Wu ; Hongsheng Chen
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：August 27, 2015
• 年：2015
• 卷：119
• 期：34
• 页码：19772-19779
• 全文大小：478K
• ISSN：1932-7455

文摘

The band gap of graphene is nearly zero, and thus novel two-dimensional (2D) semiconductor and band gap engineering of graphene is highly desired for advanced optoelectronic applications. Herein, we have experimentally produced quasi-two-dimensional (quasi-2D) SiC by reaction between graphene and a silicon source, which was designed and supported by Born鈥揙ppenheimer molecular dynamics simulations. The lateral length of the as-synthesized quasi-2D SiC is mainly in the range of 0.3鈥? 渭m while the thickness is commonly below 10 nm. Quasi-2D SiC₂ is also found as a byproduct, which is stable over 3 months in air atmosphere. The exciton binding energy of quasi-2D multilayers SiC can reach 0.23 eV while the band gap is around 3.72 eV. Additionally, in situ transmission electron microscopy has firmly proven that quasi-2D SiC can be synthesized through the reaction between graphene and silicon quantum dots. The first production of quasi-2D SiC and SiC₂ makes the band gap engineering in the graphene lattice plane possible.