In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy

详细信息    查看全文

• 作者：Daniel A. Chenet ; O. Burak Aslan ; Pinshane Y. Huang ; Chris Fan ; Arend M. van der Zande ; Tony F. Heinz ; James C. Hone
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：September 9, 2015
• 年：2015
• 卷：15
• 期：9
• 页码：5667-5672
• 全文大小：492K
• ISSN：1530-6992

文摘

Rhenium disulfide (ReS₂) is a semiconducting layered transition metal dichalcogenide that exhibits a stable distorted 1T phase. The reduced symmetry of this system leads to in-plane anisotropy in various material properties. Here, we demonstrate the strong anisotropy in the Raman scattering response for linearly polarized excitation. Polarized Raman scattering is shown to permit a determination of the crystallographic orientation of ReS₂ through comparison with direct structural analysis by scanning transmission electron microscopy (STEM). Analysis of the frequency difference of appropriate Raman modes is also shown to provide a means of precisely determining layer thickness up to four layers.