Controlled Synthesis of High-Quality Monolayered 伪-In2Se3 via Physical Vapor Deposition

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• 作者：Jiadong Zhou ; Qingsheng Zeng ; Danhui Lv ; Linfeng Sun ; Lin Niu ; Wei Fu ; Fucai Liu ; Zexiang Shen ; Chuanhong Jin ; Zheng Liu
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：15
• 期：10
• 页码：6400-6405
• 全文大小：386K
• ISSN：1530-6992

文摘

In this work, we have demonstrated the synthesis of high-quality monolayered 伪-In₂Se₃ using physical vapor deposition method under atmospheric pressure. The quality of the In₂Se₃ atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In₂Se₃ and exhibit p-type semiconducting behaviors with the mobility up to 2.5 cm²/ Vs. The In₂Se₃ layers also show a good photoresponsivity of 340A/W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In₂Se₃ atomic layers a promising candidate for the optoelectronic and photosensitive device applications.