High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal鈥揙rganic Chemical Vapor Deposition

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• 作者：Alan C. Farrell ; Wook-Jae Lee ; Pradeep Senanayake ; Michael A. Haddad ; Sergey V. Prikhodko ; Diana L. Huffaker
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：15
• 期：10
• 页码：6614-6619
• 全文大小：378K
• ISSN：1530-6992

文摘

We report on the first demonstration of InAs_1鈥?i>xSb_x nanowires grown by catalyst-free selective-area metal鈥搊rganic chemical vapor deposition (SA-MOCVD). Antimony composition as high as 15 % is achieved, with strong photoluminescence at all compositions. The quality of the material is assessed by comparing the photoluminescence (PL) peak full-width at half-max (fwhm) of the nanowires to that of epitaxially grown InAsSb thin films on InAs. We find that the fwhm of the nanowires is only a few meV broader than epitaxial films, and a similar trend of relatively constant fwhm for increasing antimony composition is observed. Furthermore, the PL peak energy shows a strong dependence on temperature, suggesting wave-vector conserving transitions are responsible for the observed PL in spite of lattice mismatched growth on InAs substrate. This study shows that high-quality InAsSb nanowires can be grown by SA-MOCVD on lattice mismatched substrate, resulting in material suitable for infrared detectors and high-performance nanoelectronic devices.