Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy

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• 作者：Dalin Zhang ; Zhi Liu ; Dongliang Zhang ; Xu Zhang ; Junying Zhang ; Jun Zheng ; Yuhua Zuo ; Chunlai Xue ; Chuanbo Li ; Shunri Oda ; Buwen Cheng ; Qiming Wang
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：August 6, 2015
• 年：2015
• 卷：119
• 期：31
• 页码：17842-17847
• 全文大小：389K
• ISSN：1932-7455

文摘

A new strategy to grow defect-free GeSn alloy matrixes (GSMs) on Si(111) substrates with the assistance of Sn is discussed. It is found that the compressive strain induced by a large lattice mismatch (>4.2%) in the GeSn鈥揝i system is relaxed by introducing (111)-parallel planar dislocations at the GeSn/Si interface, while the upper part of the GSMs remained defect-free. The incorporation of Sn into Ge is investigated by both Raman spectra and selected area electron diffraction patterns. The Sn concentration varies approximately linearly against the epitaxial temperature and reaches 5.26% at 300 掳C, which is considerably larger than the equilibrium value. The growth mechanism and morphological features are investigated systematically. The proposed method provides an easy technique to grow high-quality GeSn materials for Si-based photonics and microelectronics applications.