Semi-Transparent ZnO-CuI/CuSCN Photodiode Detector with Narrow-Band UV Photoresponse

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• 作者：Zhi Yang ; Minqiang Wang ; Jijun Ding ; Zhongwang Sun ; Le Li ; Jin Huang ; Jing Liu ; Jinyou Shao
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：September 30, 2015
• 年：2015
• 卷：7
• 期：38
• 页码：21235-21244
• 全文大小：574K
• ISSN：1944-8252

文摘

The ZnO homogeneous pn junction photodiode is quite difficult to fabricate due to the absence of stable p-type ZnO. So exploring reliable p-type materials is necessary to build a heterogeneous pn junction with n-type ZnO. Herein, we develop a simple and low-cost solution-processed method to obtain inorganic p-type CuI/CuSCN composite film with compact morphology, high conductivity, and low surface state. The improved performance of CuI/CuSCN composite film can be confirmed based on high-rectification ratio, responsivity, and open voltage of ZnO-CuI/CuSCN photodiode UV detectors. Moreover, photodiodes with novel top electrodes are investigated. Compared with commonly used Au and graphene/Ag nanowire (NWs) electrode, poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) electrode prepared by Meyer rod-coating technique opens one route to obtain a semitransparent photodiode. The photodiode with PEDOT:PSS as the top electrode under reverse illumination has the highest photocurrent density due to higher UV transmittance of PEDOT:PSS transparent electrode compared with ITO glass. The low-energy consumption, and high responsivity, UV to visible rejection ratio and air stability make this ZnO-CuI/CuSCN photodiode quite promising in the UV-A detection field.